Original 1200V IGBT Semikron SKM195GAL123D IGBT Power Module
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Specification 4pcs / box0.7kg / box0.15kg / pcsLength: 28cm Width: 19.5cm Height: 10cm
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Price
$0.00
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Quantity
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Payment Method
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Features
? MOS input (voltage controlled)
? N channel, Homogeneous Si
? Very low tail current with low
temperature dependence
? High short circuit capability,
self limiting to 6 * I cnom
? Latch-up free
? Fast & soft inverse CAL
diodes 8)
? Isolated copper baseplate
using DCB Direct Copper Bon-
ding Technology
? Large clearance (13 mm) and
creepage distances (20 mm).
Typical Applications:
? Switching (not for linear use)
? Brake chopper, Step-up-chop-
per
1)
T case = 25 ¡ãC, unless otherwise
specified
2)
I F = ¨C I C , V R = 600 V,
¨C di F /dt = 1000 A/?s , V GE = 0 V
3)
Use V GEoff = -5 ... -15 V
5)
See fig. 2 + 3; R Goff = 5,6 ?
6)
The free-wheeling diodes of
the GAL type have the data of
the inverse diodes of
SKM 145 GB 123 D
7)
for protection only
8)
CAL = Controlled Axial Lifetime
Technology.
